Organic field-effect transistor sensors: a tutorial review. - NCBI

Organic Field-Effect Transistors XV

Index Terms—organic field effect transistors, contact resistances, nonlinear contact ..... xV is the potential in the channel at some position x , T. V is the threshold ...

29 Jun 2005 Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuta, 

Device physics of organic field-effect transistors - RuG

29 Jun 2005 ... Department of Electronic Chemistry, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, Nagatsuta, ... Vertical Organic Field Effect Transistors - Technion - Electrical ... 23 Nov 2009 ... xv. Figure 3.14. Typical convergence plot. 45. Figure 3.15. Comparison of .... Solution-processed ambipolar vertical organic field effect transistor. 25th Anniversary Article: Organic FieldEffect Transistors: The ... 20 Jan 2014 ... Over the past 25 years, organic field‐effect transistors (OFETs) have witnessed impressive improvements in materials performance by 3–4 ...

23 Nov 2009 ... xv. Figure 3.14. Typical convergence plot. 45. Figure 3.15. Comparison of .... Solution-processed ambipolar vertical organic field effect transistor. 25th Anniversary Article: Organic FieldEffect Transistors: The ... 20 Jan 2014 ... Over the past 25 years, organic field‐effect transistors (OFETs) have witnessed impressive improvements in materials performance by 3–4 ...

1.1 Organic Semiconductors and Organic Field-Effect Transistors. xv. SUMMARY. Organic complementary circuits are attracting significant attention due to  Vertical Organic Field Effect Transistors - Technion - Electrical ... 23 Nov 2009 xv. Figure 3.14. Typical convergence plot. 45. Figure 3.15. Comparison of. Solution-processed ambipolar vertical organic field effect transistor. Extracting Contact Effects in Organic Field- Effect Transistors Index Terms—organic field effect transistors, contact resistances, nonlinear contact.. xV is the potential in the channel at some position x , T. V is the threshold